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STP110N8F7

Part No STP110N8F7
Manufacturer STMicroelectronics
Catalog FETs - Single
Description High avalanche ruggedness | MOSFET N-CH 80V 80A TO-220
Sample
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.5mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 46.8nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3435pF at 40V
Power Dissipation (Maximum) 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261658-STP110N8F7
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP110N8F7 CAD Model

Description

The STP110N8F7 is a state-of-the-art Power MOSFET delivered by the renowned semiconductor manufacturer, STMicroelectronics. This component is part of the STripFET F7 series, which is known for its exceptional performance in power conversion and management applications. The device is designed to meet the rigorous demands of modern electronic circuits, providing high efficiency, reliability, and thermal performance.

Key Features

  • Low On-Resistance: The STP110N8F7 boasts an extremely low on-resistance (RDS(on)), which significantly reduces conduction losses and enhances overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of 110A, this MOSFET can handle high current applications with ease, making it suitable for high-power density designs.
  • High Switching Speed: The fast switching speed of this device minimizes switching losses and improves performance in high-frequency power converters.
  • 100% Avalanche Tested: Ensuring ruggedness and reliability, the STP110N8F7 is thoroughly tested for avalanche energy, providing additional protection against unexpected voltage spikes.

Applications

The versatility of the STP110N8F7 allows it to be used in a wide array of applications, including but not limited to:

  • DC/DC converters
  • Motor control circuits
  • Power management systems
  • Automotive applications
  • Switching regulators

Technical Specifications

Parameter Value
Drain-source Voltage (VDS) 80V
Continuous Drain Current (ID) 110A
Power Dissipation (PD) 280W
Operating Temperature Range -55°C to 175°C

With its robust package and optimized design, the STP110N8F7 Power MOSFET from STMicroelectronics stands out as an exceptional choice for engineers and designers seeking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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