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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 7A
Rds On (Maximum) at Id, Vgs 23mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21nC at 5V
Input Capacitance (Ciss) (Maximum) at Vds 1233pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1173899-FDS4935
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FDS4935 CAD Model

Description

ON Semiconductor FDS4935 Dual P-Channel PowerTrench® MOSFET

The ON Semiconductor FDS4935 is a high-performance, dual P-Channel PowerTrench® MOSFET designed to deliver efficient power management and switching. This device is optimized for battery management systems, load switches, and power distribution applications where a low on-resistance and high switching speed are required.

Key Features:

  • Low On-Resistance: The FDS4935 boasts an exceptionally low on-resistance, which results in minimal conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring that power is managed swiftly and reliably.
  • Dual P-Channel Configuration: This device integrates two P-Channel MOSFETs in a single package, saving valuable space on the PCB and simplifying design.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by reducing gate charge and providing low on-resistance.
  • Thermal Management: The FDS4935 is encapsulated in a thermally efficient SO-8 package, which aids in heat dissipation and ensures stable operation under high-load conditions.

Applications:

  • Battery Management Systems
  • Load Switching
  • Power Distribution Networks
  • DC/DC Converters
  • Portable Electronic Devices

Specifications:

The FDS4935 features a drain-source voltage (V<sub>DS) of -30V and a continuous drain current (I<sub>D) of -6.5A at 25°C. The device's gate charge (Q<sub>g) is optimized for low voltage drive, and its total power dissipation (P<sub>D) is rated up to 2.5W, making it suitable for a variety of power-intensive applications.

With its combination of efficiency, speed, and compact form factor, the ON Semiconductor FDS4935 is an excellent choice for designers looking to enhance their power management solutions. Its robust performance and reliability make it a go-to component for modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4788 $50.2740
225+ $0.4485 $100.9125
350+ $0.4334 $151.6900
500+ $0.4031 $201.5500
645+ $0.3879 $250.1955
805+ $0.3728 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 47,508 pieces
MOQ: 105 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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