STL4N10F7 Power MOSFET by STMicroelectronics

The STL4N10F7 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This robust component is designed to deliver efficient power conversion in various applications, making it a versatile choice for designers and engineers seeking reliable and energy-saving solutions.

Key Features

• Low On-Resistance: The STL4N10F7 features a very low on-resistance (R<sub>DS(on)) which translates to reduced conduction losses and improved overall efficiency in power circuits.
• High Current Capability: With a continuous drain current (I<sub>D) rating, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• Enhanced Power Density: The device's compact footprint allows for higher power density designs, enabling more power in a smaller space.
• 100% Avalanche Tested: Guaranteeing reliability, the STL4N10F7 is thoroughly tested for avalanche ruggedness, ensuring it can withstand harsh operating conditions.
• Low Gate Charge: The reduced gate charge (Q<sub>g) results in faster switching performance and lower switching losses.

Applications

The STL4N10F7 is suitable for a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC/DC converters
• Motor control circuits
• Automotive applications
• High-efficiency power management systems

Technical Specifications

The STL4N10F7 boasts impressive technical specifications that make it a top choice for power management tasks:

• Drain-source voltage (V<sub>DS): 100V
• Continuous drain current (I<sub>D): 4A
• Power dissipation (P<sub>D): 48W
• Operating temperature range: -55°C to 175°C

STMicroelectronics' commitment to innovation and quality is evident in the STL4N10F7 Power MOSFET. With its advanced features and robust performance, this component is an excellent choice for power conversion applications requiring efficiency, reliability, and high power density.