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STL200N45LF7

Part No STL200N45LF7
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 45V 120A POWERFLAT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 45V
Id - Continuous Drain Current 120A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 1.8mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5170pF at 25V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package PowerFlat (5x6)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 720595-STL200N45LF7
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STL200N45LF7 CAD Model

Description

Introducing the STL200N45LF7 Power MOSFET from STMicroelectronics

The STL200N45LF7 is a high-performance, N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This advanced power transistor is part of ST's STripFET F7 series, which is known for its remarkable efficiency and thermal performance. The STL200N45LF7 is specially crafted for applications demanding high power density and efficiency, such as automotive systems, industrial power supplies, and high-performance computing.

Key Features

  • Low On-Resistance: The STL200N45LF7 boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency. This feature is crucial for applications that require high current handling with minimal power dissipation.
  • High Voltage Capability: With a maximum drain-source voltage (VDS) of 45V, this MOSFET can comfortably handle high-voltage applications, offering designers flexibility in their circuit designs.
  • High Current Rating: The device is capable of supporting a continuous drain current (ID) of up to 200A, making it suitable for high-current applications.
  • Enhanced Switching Performance: The STL200N45LF7 is optimized for fast switching, which is essential for reducing switching losses in power conversion applications. This results in improved efficiency and faster response times.
  • Low Gate Charge: A low gate charge (Qg) ensures that the MOSFET can be driven at high speeds with minimal power required from the driver circuit, aiding in the reduction of total power consumption.

Applications

The STL200N45LF7 is versatile and can be used in a wide range of applications, including:

  • DC/DC converters
  • Motor control units
  • Power management systems
  • Battery management systems
  • LED lighting solutions

Reliable and Robust

STMicroelectronics has designed the STL200N45LF7 with reliability in mind. The MOSFET is encapsulated in a robust package that ensures its durability under harsh conditions. It also features built-in protection against over-temperature and over-current conditions, safeguarding your designs from unexpected events.

Overall, the STL200N45LF7 from STMicroelectronics is an exemplary choice for engineers looking for a power MOSFET that combines high efficiency, robust performance, and reliability. Whether you're designing for the automotive industry, industrial power systems, or advanced computing platforms, the STL200N45LF7 is engineered to meet and exceed your high-power demands.

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