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STI8N65M5

Part No STI8N65M5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET | MOSFET N-CH 650V 7A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 15nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 690pF at 100V
Power Dissipation (Maximum) 70W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261105-STI8N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STI8N65M5 CAD Model

Description

The STI8N65M5 is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ M5 technology. This device is tailored for high efficiency and reliability in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

Key Features

  • Voltage Rating: With a robust 650 V drain-source voltage (VDS), the STI8N65M5 is well-suited for high-voltage applications, providing a comfortable design margin for enhanced system reliability.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)) of just 0.72 Ohm (typical), which translates to reduced conduction losses and improved overall efficiency.
  • Current Capacity: The STI8N65M5 can handle a continuous drain current (ID) of up to 8 A, making it capable of driving significant loads.
  • Fast Switching Performance: The fast switching characteristics of this Power MOSFET make it ideal for high-frequency power switching applications, minimizing switching losses.
  • Reduced Gate Charge: A low gate charge (Qg) ensures that less energy is required to turn the transistor on and off, further improving the power efficiency.
  • Enhanced Ruggedness: The STI8N65M5 is designed to withstand harsh operating conditions, ensuring reliability and long service life.

Applications

The versatility of the STI8N65M5 Power MOSFET makes it an excellent choice for a range of electronic designs. It is particularly well-suited for:

  • High-efficiency switch-mode power supplies (SMPS)
  • LED lighting solutions
  • Welding equipment
  • Power converters and inverters
  • Motor control circuits

Advantages of MDmesh™ M5 Technology

STMicroelectronics' proprietary MDmesh™ M5 technology enhances the performance of the STI8N65M5 by combining low gate charge and reduced capacitances with the high voltage rating, thereby achieving the best-in-class figure of merit for high-efficiency power conversion.

For designers and engineers looking for a robust, high-performance Power MOSFET, the STI8N65M5 offers an optimal solution that balances efficiency, power handling, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.8970 $69.4850
11+ $11.4022 $125.4242
16+ $11.0464 $176.7424
22+ $10.6895 $235.1690
28+ $10.3338 $289.3464
38+ $9.2643 $352.0434
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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