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2SJ162-E

Part No 2SJ162-E
Manufacturer Renesas Electronics America
Catalog FETs - Single
Description MOSFET P-CH 160V 7A TO-3P / Silicon P Channel MOS FET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Renesas Electronics America
Packaging Tube
Part Status Obsolete (End Of Life)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 160V
Current - Continuous Drain (Id) at 25°C 7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Maximum Vgs ±15V
Input Capacitance (Ciss) (Maximum) at Vds 900pF at 10V
Power Dissipation (Maximum) 100W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-3P
Manufacturer Package TO-3P-3, SC-65-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814225-2SJ162-E
Ultra Librarian 3D Model Ultra Librarian 2SJ162-E CAD Model

Description

The Renesas Electronics America 2SJ162-E is a P-Channel MOSFET device that comes in a TO-3P package.

  • Drain-to-Source Voltage (Vdss): 160V
  • Current Continuous Drain (Id) @ 25°C: 7A
  • Input Capacitance (Ciss) (Maximum) @ Vds: 900pF @ 10V
  • Mounting Type: Through Hole
  • Operating Temperature: 150°C
  • MSL Level: 1 (Unlimited)
  • Power Dissipation (Maximum): 100W (Tc)
  • Part Status: Obsolete, End-of-Life

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7500 $58.5000
13+ $8.0000 $104.0000
20+ $7.7500 $155.0000
27+ $7.5000 $202.5000
35+ $7.2500 $253.7500
47+ $6.5000 $305.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,538 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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