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Same model may have multiple batches, images only for reference.
IRL530NLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRL530NLPBF

Part No IRL530NLPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262 / HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10Ω , ID=17A )
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Infineon Technologies
Win Source Part Number 284576-IRL530NLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRL530
Introduction Date July 21, 2004
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRL530NLPBF CAD Model

Description

The Infineon Technologies IRL530NLPBF is a single FET (Field Effect Transistor) with a drain-source breakdown voltage of 30V and a continuous drain current @ 25°C of 2.7A (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 2.7A (Ta)
  • Mounting: Surface-mounting
  • Package: Micro3/SOT-23
  • Power Dissipation: 1.3W (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 25μA
  • Maximum Gate Charge: 1nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 100 mOhm @ 2.7A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: High

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