STGWT80H65FB - STMicroelectronics Trench Gate Field-Stop IGBT

The STGWT80H65FB is a high-performance 650V trench gate field-stop IGBT produced by STMicroelectronics, designed for a wide range of power applications. This IGBT combines the efficiency of trench gate technology with the performance of field-stop structure to provide an excellent trade-off between switching speed and on-state behavior, making it suitable for both hard-switching and soft-switching applications.

Key Features:

• Maximum Collector-Emitter Voltage (V_CE): 650V, providing ample headroom for high voltage applications.
• Collector Current Rating (I_C): 80A, ensuring high current handling capabilities.
• Low On-State Voltage (V_CE(sat)): This feature minimizes conduction losses and improves efficiency during operation.
• High Switching Speed: The device is optimized for fast switching, reducing switching losses and enabling high-frequency operation.
• Co-Packaged with Free-Wheeling Diode: Comes with an integrated fast and soft recovery anti-parallel diode for full-bridge topologies.
• Short-Circuit Rating: Offers robustness and reliability with a short-circuit withstand time.

Applications:

• Uninterruptible Power Supplies (UPS)
• Welding equipment
• Solar inverters
• Power factor correction circuits
• Induction heating
• High-performance drives

The STGWT80H65FB is housed in a TO-247 long leads package, which is known for its high thermal performance and is widely used in high-power applications. The package ensures efficient heat dissipation, contributing to the device's reliability and longevity.

STMicroelectronics has designed the STGWT80H65FB IGBT to offer high efficiency, low power dissipation, and excellent thermal characteristics. It is a perfect choice for designers looking for a robust power transistor capable of operating in demanding conditions while providing high energy efficiency.