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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194564-STP3N100FI
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP3N100FI CAD Model

Description

STP3N100FI - High Voltage Power MOSFET by STMicroelectronics

The STP3N100FI is a robust N-channel Power MOSFET produced by STMicroelectronics, designed to deliver high-efficiency power conversion in various applications. This semiconductor device is part of ST's high voltage Power MOSFET portfolio and is engineered to operate with high voltage levels, making it ideal for a wide range of power supply and switching applications.

With a 1000V drain-source breakdown voltage (V<sub>DS), the STP3N100FI can handle high voltage operations with ease, providing a reliable solution for circuits that are exposed to high voltage stress. Its high voltage capability also means that it can be used in applications such as switch-mode power supplies (SMPS), high-efficiency converters, and motor control systems where voltage spikes are common.

The device has an on-resistance (R<sub>DS(on)) of typically 3.3 ohms, which ensures low conduction losses and improves overall system efficiency. This characteristic is particularly important in applications where energy efficiency is crucial, such as in power management systems for consumer electronics, industrial controls, and renewable energy inverters.

Featuring a fast switching speed, the STP3N100FI minimizes switching losses and is capable of operating at high frequencies. This makes it well-suited for high-speed switching applications, including resonant converters and power factor correction (PFC) circuits. The fast switching also contributes to reduced electromagnetic interference (EMI), which is beneficial in sensitive electronic environments.

The STP3N100FI comes in an isolated TO-220 FullPak package, which provides excellent thermal performance and simplifies the mounting process as it does not require insulating mounts or pads. The package is designed for through-hole mounting, which ensures mechanical robustness and ease of integration into various circuit designs.

In summary, the STP3N100FI from STMicroelectronics is a high voltage Power MOSFET that offers a combination of high voltage capability, low on-resistance, fast switching, and a convenient package design. It is a versatile component that can enhance the performance and reliability of a broad range of high voltage power applications.

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