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STGW8M120DF3

Part No STGW8M120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 32 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 8A
Power - Max 167 W
Switching Energy 390µJ (on), 370µJ (Off)
Input Type Standard
Gate Charge 32 nC
Td (on/off) @ 25°C 20ns/126ns
Test Condition 600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr) 103 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW8
Other Names 497-17619
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277364-STGW8M120DF3
Ultra Librarian 3D Model Ultra Librarian STGW8M120DF3 CAD Model

Description

STGW8M120DF3 - High-Efficiency IGBT from STMicroelectronics

The STGW8M120DF3 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader. This IGBT is designed to offer a high level of efficiency and reliability for a wide range of power applications. It is particularly suitable for high-performance power conversion systems that require low conduction and switching losses.

Featuring a maximum collector-emitter voltage (VCE) of 1200V and a collector current rating of 8A, the STGW8M120DF3 is capable of handling high voltage and current levels, making it an excellent choice for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

The device utilizes STMicroelectronics' advanced trench gate field-stop technology, which provides an optimized trade-off between switching performance and on-state behavior. This technology ensures that the STGW8M120DF3 has a low on-state voltage drop (VCE(sat)) and minimal tail current, resulting in reduced power dissipation and improved overall efficiency.

Furthermore, the STGW8M120DF3 is designed with a co-packaged freewheeling diode, which offers fast recovery characteristics. This feature is essential for reducing electromagnetic interference (EMI) and enhancing the performance of the device in fast-switching applications.

The robustness of the STGW8M120DF3 is further enhanced by its maximum junction temperature of 175°C. This high-temperature capability allows for better thermal management and ensures reliable operation even under extreme conditions.

For ease of integration, the STGW8M120DF3 comes in a TO-247 long leads package, which is widely used in the industry and known for its excellent thermal and electrical performance. This package also allows for straightforward mounting and soldering onto a printed circuit board (PCB).

In summary, the STGW8M120DF3 from STMicroelectronics is a high-performance IGBT that combines efficiency, reliability, and ease of use. Its advanced features make it an ideal choice for designers looking to optimize their power conversion systems for better performance and energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4350 $57.9150
22+ $5.2801 $116.1622
34+ $5.1150 $173.9100
47+ $4.9500 $232.6500
61+ $4.7851 $291.8911
81+ $4.2901 $347.4981
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Availability: 3,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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