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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 120 A
Current - Collector Pulsed (Icm) 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 468 W
Switching Energy 690µJ (on), 2.54mJ (off)
Input Type Standard
Gate Charge 225 nC
Td (on/off) @ 25°C 47ns/125ns
Test Condition 400V, 75A, 3.3Ohm, 15V
Reverse Recovery Time (trr) 165 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16974
Standard Package 600
Win Source Part Number 1217277-STGW75M65DF2
Ultra Librarian 3D Model Ultra Librarian STGW75M65DF2 CAD Model

Description

STGW75M65DF2 - High-Efficiency Trench Gate Field-Stop IGBT

The STGW75M65DF2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics, a global semiconductor leader. This advanced power transistor is designed for a wide range of high-voltage applications requiring high efficiency and fast switching performance. It is a member of STMicroelectronics' Trench Gate Field-Stop IGBTs, which are known for their low on-state voltage drop (V<sub>CE(sat)) and minimal switching losses.

With a maximum collector-emitter voltage (V<sub>CE) rating of 650V and a continuous collector current (I<sub>C) of 75A at 25°C, the STGW75M65DF2 is well-suited for demanding power conversion applications. This includes, but is not limited to, Uninterruptible Power Supplies (UPS), solar inverters, welding equipment, and high-performance drives where energy efficiency is paramount.

The device features a robust and cost-effective design, with a maximum operating junction temperature (T<sub>j) of 175°C, which ensures reliability even under extreme conditions. Its low conduction losses are attributed to the trench gate and field-stop structure, which enhances performance by providing a better trade-off between switching speed and saturation voltage compared to conventional IGBTs.

Furthermore, the STGW75M65DF2 incorporates a co-packaged fast recovery anti-parallel diode, which significantly reduces the number of components required in a power electronics system. The diode's fast recovery time minimizes the losses during the diode reverse recovery phase, which is critical in high-frequency switching applications.

For ease of integration, the STGW75M65DF2 comes in a TO-247 long leads package, which is widely used in commercial power electronics systems. This package provides excellent thermal performance and is compatible with standard mounting processes.

STMicroelectronics provides comprehensive technical support for the STGW75M65DF2, including detailed datasheets, application notes, and simulation models. This ensures that designers can optimize their systems for the best performance, reliability, and cost-effectiveness when using this advanced IGBT.

In summary, the STGW75M65DF2 is a high-performance IGBT that offers a combination of efficiency, speed, and reliability, making it an excellent choice for a variety of high-power applications.

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Quantity Unit Price Ext. Price
4+ $18.3273 $73.3092
8+ $15.0378 $120.3024
12+ $14.5678 $174.8136
16+ $14.0979 $225.5664
21+ $13.6280 $286.1880
28+ $12.2182 $342.1096
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MOQ: 4 pcs
Order Increment : 1 piece
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