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STGW40NC60KD

Part No STGW40NC60KD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 70A 250W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 70A
Pulsed Collector Current 220A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 595μJ (on), 716μJ (off)
Input Type Standard
Gate Charge 135nC
Turn-on and Turn-off delay time 46ns/164ns
Testing Conditions 480V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 45ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 Long Leads
Win Source Part Number 1103059-STGW40NC60KD
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGW40NC60KD CAD Model

Description

The STGW40NC60KD is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics, a leader in the semiconductor industry. This high-speed switch is designed for a variety of applications, including motor drives, uninterruptible power supplies (UPS), and high-frequency converters.

Key Features

  • High current capability: The STGW40NC60KD can handle a continuous collector current of up to 40A, making it suitable for high-power applications.
  • High voltage rating: With a collector-emitter voltage (Vces) of 600V, the IGBT is designed for use in circuits with high voltage requirements.
  • Low on-state voltage drop (Vce(sat)): The device offers a low saturation voltage of typically 2.3V, which contributes to improved efficiency and reduced power losses during operation.
  • Fast switching speed: The IGBT is capable of high-speed switching, which is crucial for applications that require quick response times and high-frequency operation.
  • Co-packaged with a free-wheeling diode: The inclusion of a fast recovery diode in the package simplifies circuit design and enhances performance by providing a path for the freewheeling current during the IGBT's off state.

Applications

The versatility of the STGW40NC60KD allows it to be used in a wide range of applications. Some common uses include:

  • AC and DC motor drives
  • Power inverters for renewable energy sources such as solar panels and wind turbines
  • Switched-mode power supplies (SMPS)
  • Welding equipment
  • Inductive heating

Technical Specifications

Parameter Value
Collector-Emitter Voltage (Vces) 600V
Continuous Collector Current (Ic) 40A
Gate-Emitter Voltage (Vges) ±20V
Power Dissipation (Pd) 190W
Operating Junction Temperature (Tj) -55°C to +150°C

With its robust design and superior performance characteristics, the STGW40NC60KD from STMicroelectronics provides an efficient solution for high-voltage and high-power switching applications.

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