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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 40A
Maximum Power Dissipation 468W
Total Switching Energy(Ets) 1.5mJ (on), 2.25mJ (off)
Input Type Standard
Gate Charge 125nC
Turn-on and Turn-off delay time 35ns/140ns
Testing Conditions 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 355ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 212285-STGW40M120DF3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW40M120DF3 CAD Model

Description

STGW40M120DF3 - Trench Gate Field-Stop IGBT by STMicroelectronics

The STGW40M120DF3 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This high-performance IGBT is part of STMicroelectronics' advanced trench gate field-stop technology, which offers superior efficiency, reliability, and thermal performance. It is particularly suitable for a wide range of high-voltage and high-speed power switching applications.

Key Features

  • Maximum Collector-Emitter Voltage (V<sub>CE): 1200V - This high breakdown voltage makes the STGW40M120DF3 suitable for applications requiring high voltage operation.
  • Collector Current (I<sub>C): 40A - The device can handle significant current, making it ideal for power-intensive applications.
  • Low On-Voltage Drop (V<sub>CE(sat)): The low saturation voltage helps in reducing conduction losses and improves overall efficiency.
  • Short-Circuit Rating: This IGBT is capable of withstanding short-circuit conditions for a specified period, enhancing robustness and reliability.
  • High Switching Speed: The fast switching capabilities reduce switching losses and improve performance in high-frequency applications.
  • Co-Packaged with a Free-Wheeling Diode: The inclusion of an anti-parallel diode allows for easy implementation in circuits that require a freewheeling diode, saving space and simplifying design.

Applications

The STGW40M120DF3 is designed for a diverse array of applications, including but not limited to:

  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Induction Heating Systems
  • Power Factor Correction Circuits
  • Solar Inverters
  • High-Frequency Converters

Design Support and Packaging

STMicroelectronics provides extensive support for design engineers, including application notes, reference designs, and simulation tools to facilitate the integration of the STGW40M120DF3 into various systems. The IGBT is offered in a TO-247 long leads package, which is well-known for its excellent thermal performance and is widely used in high-power applications.

The STGW40M120DF3 represents STMicroelectronics' commitment to delivering high-quality power semiconductors that meet the evolving needs of modern electronic systems, ensuring energy efficiency, reliability, and cutting-edge performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.4766 $56.8596
13+ $7.7757 $101.0841
20+ $7.5327 $150.6540
28+ $7.2897 $204.1116
36+ $7.0467 $253.6812
48+ $6.3177 $303.2496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 45,000 pieces
MOQ: 6 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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