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STGW20IH125DF

Part No STGW20IH125DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1250 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Power - Max 259 W
Switching Energy 410µJ (off)
Input Type Standard
Gate Charge 68 nC
Td (on/off) @ 25°C -/106ns
Test Condition 600V, 15A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number STGW20
Other Names STGW20IH125DF,-497-14559-5,497-STGW20IH125DF,497-14559-5,497-14559-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277392-STGW20IH125DF
Ultra Librarian 3D Model Ultra Librarian STGW20IH125DF CAD Model

Description

The STGW20IH125DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by the renowned semiconductor manufacturer, STMicroelectronics. This IGBT is designed to meet the needs of a wide range of high-efficiency applications, offering an excellent balance of switching performance and on-state behavior, which is crucial for high-speed and energy-efficient operation.

With a maximum collector-emitter voltage of 1200V and a continuous collector current of 20A at 25°C, the STGW20IH125DF is capable of handling high power levels, making it suitable for use in applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment. Its high switching frequency and low conduction losses are attributed to the advanced "Field Stop" trench technology that STMicroelectronics has integrated into this IGBT.

One of the key features of the STGW20IH125DF is its short-circuit withstand time, rated at 10 microseconds, providing robustness and reliability when unexpected overcurrent conditions occur. Additionally, it has a low gate charge and low VCE(sat), which reduces power dissipation and improves overall efficiency.

The device comes in a TO-247 long leads package, offering excellent thermal performance and making it easy to mount on a heat sink for effective heat dissipation. The package is designed to handle the tough environmental and mechanical conditions typical of industrial applications.

As part of STMicroelectronics' commitment to environmental sustainability, the STGW20IH125DF is manufactured with no use of environmentally sensitive materials and is fully RoHS compliant. This ensures that it meets the latest international environmental standards and can be used in green energy applications.

In summary, the STGW20IH125DF from STMicroelectronics is a robust and efficient IGBT that offers a combination of high power handling, fast switching speeds, and low losses. Its advanced features and compliance with environmental standards make it an ideal choice for designers looking to create reliable and energy-efficient power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3927 $50.8905
36+ $2.7838 $100.2168
56+ $2.6968 $151.0208
77+ $2.6098 $200.9546
100+ $2.5228 $252.2800
133+ $2.2618 $300.8194
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Availability: 445 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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