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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 36 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 88 W
Switching Energy 290µJ (on), 185µJ (off)
Input Type Standard
Gate Charge 140 nC
Td (on/off) @ 25°C 30ns/175ns
Test Condition 400V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Base Product Number STGFW35
Other Names 497-13270-5,-497-13270-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277386-STGFW35HF60W
Ultra Librarian 3D Model Ultra Librarian STGFW35HF60W CAD Model

Description

STGFW35HF60W - IGBT Module from STMicroelectronics

The STGFW35HF60W is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) module designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This module is specifically engineered to deliver high efficiency and reliability for a wide range of power electronics applications including motor drives, UPS systems, renewable energy inverters, and more.

Key Features

  • Voltage & Current: The STGFW35HF60W is rated for a maximum collector-emitter voltage of 600V, making it suitable for medium voltage applications. It can handle a continuous collector current of up to 35A at a case temperature of 25°C, ensuring robust performance in demanding conditions.
  • Low Switching Losses: With its fast switching characteristics, this IGBT module offers low conduction and switching losses, which is critical for improving the efficiency of power conversion systems.
  • High Thermal Performance: The module is encapsulated in a high thermal performance package that ensures effective heat dissipation, leading to improved lifespan and reliability.
  • Co-Packaged Diode: Each IGBT is co-packaged with a fast recovery diode, optimized for the high-speed switching nature of modern power applications, which minimizes recovery losses and enhances overall system efficiency.

Advanced Technology

The STGFW35HF60W utilizes STMicroelectronics' advanced Field Stop Trench IGBT technology, which provides a perfect balance between conduction and switching losses, enabling designers to achieve high-efficiency solutions. The module's enhanced ruggedness and superior electrical performance are testament to ST's commitment to quality and innovation.

Applications

This IGBT module is ideal for a variety of high-performance applications, including:

  • AC and DC motor drives
  • Uninterruptible Power Supplies (UPS)
  • Power factor correction circuits
  • Solar inverters and wind turbine converters
  • Welding equipment

With its robust design and cutting-edge technology, the STGFW35HF60W from STMicroelectronics offers a competitive edge for power electronic system designers looking for a reliable and efficient IGBT module solution.

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Quantity Unit Price Ext. Price
2+ $29.8496 $59.6992
5+ $24.4920 $122.4600
7+ $23.7266 $166.0862
9+ $22.9612 $206.6508
12+ $22.1959 $266.3508
16+ $19.8997 $318.3952
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Availability: 191 pieces
MOQ: 2 pcs
Order Increment : 1 piece
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