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STGF3NC120HD

Part No STGF3NC120HD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 6A 25W TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 6A
Pulsed Collector Current 20A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 3A
Maximum Power Dissipation 25W
Total Switching Energy(Ets) 236μJ (on), 290μJ (off)
Input Type Standard
Gate Charge 24nC
Turn-on and Turn-off delay time 15ns/118ns
Testing Conditions 800V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr) 51ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Win Source Part Number 083795-STGF3NC120HD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGF3NC120HD CAD Model

Description

STGF3NC120HD - STMicroelectronics IGBT

The STGF3NC120HD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader. This IGBT is specifically engineered to offer a combination of fast switching, low on-state voltage, and high thermal performance, making it an excellent choice for a wide range of power applications.

Key Features:

  • High Current Rating: The device is capable of handling continuous collector currents up to 3A, with pulsed collector currents reaching 12A, providing ample headroom for demanding applications.
  • High Voltage Capability: With a collector-emitter voltage (VCE) of 1200V, the STGF3NC120HD can efficiently manage high voltage operations, making it suitable for industrial, automotive, and energy applications.
  • Low On-State Voltage: This IGBT features a low on-state voltage drop, which enhances efficiency by minimizing conduction losses and improving overall thermal performance.
  • Fast Switching Speed: The fast switching characteristics of the STGF3NC120HD reduce switching losses and enable high-frequency operation, which is critical for efficient power conversion in inverters and converters.
  • High Thermal Performance: Optimized for effective heat dissipation, this IGBT can operate at higher temperatures, thereby ensuring reliability and longevity in harsh environments.
  • Robustness: The device is designed with a rugged, co-packaged freewheeling diode that provides enhanced ruggedness and reverse voltage protection.

Applications:

The STGF3NC120HD is versatile and can be used in a variety of applications. These include:

  • Motor drives and controls
  • Uninterruptible power supplies (UPS)
  • Power factor correction circuits
  • Inductive heating and welding equipment
  • Renewable energy inverters (solar and wind)

Advantages:

The STGF3NC120HD stands out in the market due to its exceptional efficiency, reliability, and performance in high-voltage and high-current environments. Its robust design and thermal management capabilities make it an ideal choice for engineers looking to optimize their power designs for both performance and cost-effectiveness.

With its comprehensive features and applications, the STGF3NC120HD from STMicroelectronics is a testament to the company's commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5666 $54.8310
80+ $1.2854 $102.8320
125+ $1.2453 $155.6625
170+ $1.2051 $204.8670
215+ $1.1649 $250.4535
290+ $1.0444 $302.8760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,982 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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