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STFI6N62K3

Part No STFI6N62K3
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages | MOSFET N CH 620V 5.5A I2PAKFP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 620V
Id - Continuous Drain Current 5.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 875pF at 50V
Power Dissipation (Maximum) 30W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I2PAKFP (TO-281)
Manufacturer Package TO-262-3 Full Pack, I2Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 734756-STFI6N62K3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STFI6N62K3 CAD Model

Description

STFI6N62K3 - STMicroelectronics

The STFI6N62K3 is a high-performance, N-channel field-effect transistor (FET) designed by STMicroelectronics, a leader in semiconductor solutions. This FET is specifically engineered to address the demanding requirements of modern power electronic applications. With its robust design and advanced technology, the STFI6N62K3 offers a blend of efficiency, reliability, and performance that is well-suited for a wide range of applications, including switch-mode power supplies, motor control, and power management systems.

The device features a breakdown voltage of 620V, which ensures safe operation under high voltage conditions and provides a significant margin for applications that experience voltage spikes or surges. This high breakdown voltage makes the STFI6N62K3 an excellent choice for high voltage power conversion systems.

With a continuous drain current of 6A, the STFI6N62K3 can handle significant power levels, making it suitable for high-power applications. The low on-resistance (R<sub>DS(on)) of the device minimizes conduction losses, which improves overall efficiency and reduces the thermal load on the system. This characteristic is particularly important in applications where energy efficiency is critical, such as in power supply units and inverters.

The STFI6N62K3 also features a fast-switching speed, which is essential for reducing switching losses in power converters and for achieving high-frequency operation. This makes the device an ideal choice for modern switch-mode power supplies and other applications that require fast switching performance.

STMicroelectronics has designed the STFI6N62K3 with an integrated SuperMESH™3 Power MOSFET technology, which combines the benefits of reduced gate charge, low crss (reverse transfer capacitance), and low gate resistance. These features contribute to the FET's high efficiency and thermal performance.

To ensure reliability and longevity, the STFI6N62K3 is encapsulated in a fully isolated TO-220FP package, which provides excellent heat dissipation and allows for easy mounting on a heat sink. The package's isolation also simplifies compliance with safety standards, as it reduces the need for additional insulation between the device and the heat sink.

In summary, the STFI6N62K3 from STMicroelectronics is a state-of-the-art power transistor that offers a combination of high voltage capability, low on-resistance, fast switching, and thermal efficiency. It is an ideal choice for designers looking to optimize performance in power electronic systems.

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