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STW35N60DM2

Part No STW35N60DM2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 600V 28A / Extremely high dv/dt ruggedness
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 14A, 10V
Vgs(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 100V
Power Dissipation (Maximum) 210W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Part Number Series STW35N
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806232-STW35N60DM2
Ultra Librarian 3D Model Ultra Librarian STW35N60DM2 CAD Model

Description

STW35N60DM2 - High Performance N-Channel Power MOSFET by STMicroelectronics

The STW35N60DM2 is a state-of-the-art N-channel MDmesh™ DM2 Power MOSFET from STMicroelectronics, designed with a focus on achieving outstanding efficiency and performance in high-power applications. This device is built using an advanced proprietary technology that combines the benefits of reduced on-resistance, high dv/dt capability, and exceptional switching performance, making it an ideal choice for a wide range of power conversion applications.

With a drain-source voltage (V<sub>DS) of 600V, the STW35N60DM2 is well-suited for handling high voltage conditions, providing a robust solution for systems that require reliable and efficient power handling capabilities. The MOSFET features a continuous drain current (I<sub>D) of 35A at 25°C, which ensures it can support significant current loads without compromising performance.

The low on-state resistance (R<sub>DS(on)) of this MOSFET, typically just 0.095 Ω, translates to reduced conduction losses, which is crucial for improving the overall efficiency of power conversion systems. Additionally, the device's optimized capacitance profile results in low switching losses, further enhancing its efficiency and making it a suitable component for high-frequency applications.

The STW35N60DM2 is encapsulated in a TO-247 long leads package, which not only allows for superior thermal performance but also enables easier mounting on heat sinks, thus ensuring better heat dissipation during operation. This packaging contributes to the device's ability to operate reliably even under high thermal conditions.

Applications for the STW35N60DM2 are diverse and include switched-mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and other high-performance power conversion systems where efficiency, reliability, and thermal management are critical.

STMicroelectronics' commitment to innovation is reflected in the STW35N60DM2, providing designers with a powerful component that pushes the boundaries of power MOSFET technology. Integrating this MOSFET into your designs will help achieve higher efficiency, reduced power losses, and enhanced system reliability.

For detailed specifications, application notes, and additional resources, visit the STMicroelectronics website or contact their support team to ensure the STW35N60DM2 meets your application requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.8519 $53.3709
26+ $3.9811 $103.5086
39+ $3.8567 $150.4113
54+ $3.7323 $201.5442
70+ $3.6079 $252.5530
93+ $3.2346 $300.8178
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,400 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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