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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 10A
Pulsed Collector Current 25A
Collector-emitter saturation voltage(Max) 1.65V @ 15V, 5A
Maximum Power Dissipation 25W
Total Switching Energy(Ets) 60μJ (on), 340μJ (off)
Input Type Standard
Gate Charge 18nC
Turn-on and Turn-off delay time 19ns/160ns
Testing Conditions 390V, 5A, 10 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Win Source Part Number 1103023-STGF10NC60SD
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGF10NC60SD CAD Model

Description

STGF10NC60SD - IGBT from STMicroelectronics

The STGF10NC60SD is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed and manufactured by STMicroelectronics, a global semiconductor leader. This IGBT is tailored for a wide range of high-efficiency applications, particularly in the realm of power management and conversion. It is well-suited for designs that require low conduction and switching losses with a high level of reliability and robustness.

Key Features

  • High Voltage Capability: The STGF10NC60SD is rated for a maximum collector-emitter voltage of 600V, making it suitable for various high-voltage applications.
  • Low On-Voltage Drop (V<sub>CE(sat)): The device has a low saturation voltage, which results in reduced conduction losses and improved efficiency in power circuits.
  • High Current Rating: With a continuous collector current rating of 10A, and a pulsed collector current capability, this IGBT can handle significant power levels.
  • Fast Switching Speed: The fast switching characteristics of the STGF10NC60SD ensure minimal switching losses and make it ideal for high-frequency applications.
  • Co-Packaged with Free Wheeling Diode: The IGBT comes with an integrated fast recovery diode, which provides protection against reverse voltage transients and reduces component count in the circuit.
  • Short-Circuit Rating: It features a short-circuit withstand time, providing additional robustness and reliability in adverse conditions.
  • High Operating Temperature: The device can operate at junction temperatures up to 150°C, allowing for use in high-temperature environments.

Applications

The STGF10NC60SD is ideal for a diverse array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Inductive Heating
  • Welding Equipment

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGF10NC60SD is no exception, benefitting from ST's rigorous testing and quality control processes. Its robust design ensures long-term performance, even in challenging environmental conditions.

Overall, the STGF10NC60SD IGBT from STMicroelectronics offers a balanced performance for power applications requiring high efficiency, reliability, and thermal management. Its advanced features and capabilities make it a smart choice for designers looking to optimize their power systems.

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