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Same model may have multiple batches, images only for reference.
IKN04N60RC2ATMA1
Same model may have multiple batches, images only for reference.

IKN04N60RC2ATMA1

Part No IKN04N60RC2ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description HOME APPLIANCES 14 PG-SOT223-3
Datasheet
IKN04N60RC2ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series -
Package Tape & Reel
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 7.5 A
Current - Collector Pulsed (Icm) 12 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 4A
Power - Max 6.8 W
Switching Energy 95µJ (on), 62µJ (off)
Input Type Standard
Gate Charge 24 nC
Td (on/off) @ 25°C 8ns/126ns
Test Condition 400V, 4A, 49Ohm, 15V
Reverse Recovery Time (trr) 39 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-3
Base Product Number IKN04N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376602-IKN04N60RC2ATMA1
Ultra Librarian 3D Model Ultra Librarian IKN04N60RC2ATMA1 CAD Model

Description

The 1376602-IKN04N60RC2ATMA1 is a single IGBT transistor designed by Infineon Technologies.

  • Package: TO-261-4
  • Series: IKN04N
  • Temperature Range: -40°C to 150°C
  • Collector Current: 7.5A
  • Collector-Emitter Breakdown Voltage: 600V
  • Power Dissipation: 6.8W (Max)
  • Mounting: Surface Mount
  • REACH: Unaffected
  • Reverse Recovery Time: 39ns

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