STGB20H65DFB2 - STMicroelectronics Trench Gate Field-Stop IGBT

The STGB20H65DFB2 is a high-performance, 650V IGBT from STMicroelectronics, designed using advanced Trench Gate Field-Stop technology. This device is engineered to offer an optimal trade-off between conduction and switching losses, making it an excellent choice for a wide range of high-efficiency applications.

Key Features

• Maximum Collector-Emitter Voltage (V_CE): 650V, providing a comfortable margin for applications with high voltage requirements.
• Collector Current (I_C): 20A, ensuring robust current handling capability for demanding power applications.
• Low On-Voltage Drop (V_CE(sat)): Reduced conduction losses due to a lower saturation voltage.
• High Switching Speed: Fast switching characteristics enable higher efficiency and better performance in high-frequency circuits.
• Co-Packaged with a Free-Wheeling Diode: Integrated diode provides efficient and reliable reverse recovery performance.

Applications

This IGBT is ideal for a diverse array of applications, including:

• Uninterruptible Power Supplies (UPS)
• High-performance Power Converters
• Welding Equipment
• Induction Heating Systems
• Electric Vehicle (EV) Chargers

Advantages

The STGB20H65DFB2 offers several advantages that make it a superior choice for power electronics engineers:

• Enhanced efficiency through low conduction and switching losses, which translates to energy savings and reduced thermal management requirements.
• Robustness and reliability due to its high voltage capability and ruggedness in harsh environments.
• Compatibility with standard switching schemes, allowing for ease of integration into existing designs without extensive modifications.

STMicroelectronics' commitment to innovation is exemplified by the STGB20H65DFB2 IGBT, which provides designers with a high-performance solution for their power management challenges. With its advanced features and proven technology, this IGBT is set to enhance the efficiency and reliability of a variety of power applications.