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STGB20H65DFB2

Part No STGB20H65DFB2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP 650 V, 20
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Series HB2
Package Tape & Reel
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 147 W
Switching Energy 265µJ (on), 214µJ (off)
Input Type Standard
Gate Charge 56 nC
Td (on/off) @ 25°C 16ns/78.8ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 215 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package D2PAK-3
Base Product Number STGB20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376599-STGB20H65DFB2
Ultra Librarian 3D Model Ultra Librarian STGB20H65DFB2 CAD Model

Description

STGB20H65DFB2 - STMicroelectronics Trench Gate Field-Stop IGBT

The STGB20H65DFB2 is a high-performance, 650V IGBT from STMicroelectronics, designed using advanced Trench Gate Field-Stop technology. This device is engineered to offer an optimal trade-off between conduction and switching losses, making it an excellent choice for a wide range of high-efficiency applications.

Key Features

  • Maximum Collector-Emitter Voltage (V<sub>CE): 650V, providing a comfortable margin for applications with high voltage requirements.
  • Collector Current (I<sub>C): 20A, ensuring robust current handling capability for demanding power applications.
  • Low On-Voltage Drop (V<sub>CE(sat)): Reduced conduction losses due to a lower saturation voltage.
  • High Switching Speed: Fast switching characteristics enable higher efficiency and better performance in high-frequency circuits.
  • Co-Packaged with a Free-Wheeling Diode: Integrated diode provides efficient and reliable reverse recovery performance.

Applications

This IGBT is ideal for a diverse array of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • High-performance Power Converters
  • Welding Equipment
  • Induction Heating Systems
  • Electric Vehicle (EV) Chargers

Advantages

The STGB20H65DFB2 offers several advantages that make it a superior choice for power electronics engineers:

  • Enhanced efficiency through low conduction and switching losses, which translates to energy savings and reduced thermal management requirements.
  • Robustness and reliability due to its high voltage capability and ruggedness in harsh environments.
  • Compatibility with standard switching schemes, allowing for ease of integration into existing designs without extensive modifications.

STMicroelectronics' commitment to innovation is exemplified by the STGB20H65DFB2 IGBT, which provides designers with a high-performance solution for their power management challenges. With its advanced features and proven technology, this IGBT is set to enhance the efficiency and reliability of a variety of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4658 $58.6320
100+ $1.2028 $120.2800
150+ $1.1652 $174.7800
205+ $1.1277 $231.1785
265+ $1.0900 $288.8500
355+ $0.9773 $346.9415
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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