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STGD3NC120H-1

Part No STGD3NC120H-1
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 16A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT - 1200 V 16 A 105 W Through Hole IPAK (TO-251)
Manufacturer STMicroelectronics
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-251-3 Short Leads, IPak, TO-251AA
Case / Package IPAK (TO-251)
Family Name STGD3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 897985-STGD3NC120H-1
Ultra Librarian 3D Model Ultra Librarian STGD3NC120H-1 CAD Model

Description

STGD3NC120H-1 IGBT - STMicroelectronics

The STGD3NC120H-1 is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, designed to meet the demands of modern high-efficiency power electronics. This device is part of the STPOWER product line, which is renowned for its performance in energy-saving and power management applications.

Key Features

  • High Current Rating: This IGBT can handle a continuous collector current of up to 15A, making it suitable for high-power applications.
  • High Voltage Capability: With a collector-emitter voltage of 1200V, the STGD3NC120H-1 is ideal for handling high voltage circuits, ensuring reliability in demanding conditions.
  • Low On-State Voltage Drop (Vce(on)): The device features a low on-state voltage drop, which results in reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The fast switching capability of the IGBT minimizes switching losses and enables operation at higher frequencies, which is crucial for applications such as switched-mode power supplies and inverter circuits.
  • High-Temperature Operation: Engineered to withstand high operating temperatures, the STGD3NC120H-1 maintains stable performance even under thermal stress.

Applications

The STGD3NC120H-1 is versatile and can be used in a range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • High-frequency converters and inverters
  • Motor drives and controls
  • Inductive heating and welding systems

Advanced Technology

STMicroelectronics has integrated its state-of-the-art trench gate field-stop technology into the STGD3NC120H-1 IGBT, which provides enhanced performance by combining low gate charge and low on-state voltage with high-speed switching. This technology makes the IGBT highly efficient and suitable for a wide range of high-performance applications.

Package and Quality

The STGD3NC120H-1 comes in a TO-252 (DPAK) package, which is compact and allows for efficient heat dissipation. The device is RoHS compliant and adheres to the highest standards of quality and reliability that customers have come to expect from STMicroelectronics.

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