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STGB7NC60HDT4

Part No STGB7NC60HDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 25A 80W D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 25A
Pulsed Collector Current 50A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 7A
Maximum Power Dissipation 80W
Total Switching Energy(Ets) 95μJ (on), 115μJ (off)
Input Type Standard
Gate Charge 35nC
Turn-on and Turn-off delay time 18.5ns/72ns
Testing Conditions 390V, 7A, 10 Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1103008-STGB7NC60HDT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name STGB7NC60HD
Introduction Date January 19, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian STGB7NC60HDT4 CAD Model

Description

The STGB7NC60HDT4 is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, a global leader in semiconductor solutions. Designed to meet the demands of high efficiency and fast switching, this IGBT is optimized for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), and inverter systems for renewable energy sources.

Key Features

  • High Voltage Capability: The device is rated for a collector-emitter voltage of 600V, making it suitable for high voltage applications.
  • Low On-State Voltage Drop (V<sub>CE(sat)): This feature ensures reduced conduction losses and improved system efficiency.
  • High-Speed Switching: The STGB7NC60HDT4 boasts a fast switching speed, which minimizes switching losses and allows for higher frequency operation.
  • Co-Packaged Free Wheeling Diode: The device includes an integrated fast recovery diode, which provides protection against reverse voltage transients and reduces component count in the circuit.
  • High Current Rating: It is capable of handling substantial current, which is essential for power-intensive applications.
  • Low Gate Charge (Q<sub>g): This results in reduced power dissipation during switching, contributing to overall energy savings.
  • Enhanced Ruggedness: The device is engineered for enhanced ruggedness and reliability, which is critical for industrial and automotive environments.

Applications

The STGB7NC60HDT4 is versatile and can be used in a variety of power applications. Its robust design and high performance make it an ideal choice for:

  • AC and DC motor drives
  • Power inverters for solar and wind energy systems
  • Switched-mode power supplies (SMPS)
  • Welding equipment
  • Inductive heating and resonant converters

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGB7NC60HDT4 is no exception, as it undergoes rigorous testing and quality control measures to ensure it performs consistently under varying conditions and throughout its lifespan.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2037 $50.6851
56+ $1.8081 $101.2536
86+ $1.7516 $150.6376
118+ $1.6951 $200.0218
153+ $1.6386 $250.7058
205+ $1.4691 $301.1655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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