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STGB10NC60KT4

Part No STGB10NC60KT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 20A 65W D2PAK  /  IGBT 600 V 20 A 65 W Surface Mount D2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series PowerMESH™
Package Tape & Reel
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Power - Max 65 W
Switching Energy 55µJ (on), 85µJ (off)
Input Type Standard
Gate Charge 19 nC
Td (on/off) @ 25°C 17ns/72ns
Test Condition 390V, 5A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1026-STGB10NC60KT4,-497-5737-6,1805-STGB10NC60KT4TR,1805-STGB10NC60KT4DKR,497-5737-1,497-5737-2,-497-5737-1,-497-5737-2,497-5737-6,1805-STGB10NC60KT4CT
Standard Package 1,000
Win Source Part Number 1110044-STGB10NC60KT4
Ultra Librarian 3D Model Ultra Librarian STGB10NC60KT4 CAD Model

Description

The STGB10NC60KT4 is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to combine the high-speed performance of a MOSFET with the high voltage and current handling capabilities of a bipolar transistor, making it suitable for a wide range of power applications.

Key Features

  • Voltage Rating: The STGB10NC60KT4 is rated for a collector-emitter voltage of 600V, providing a robust solution for high voltage applications.
  • Current Rating: It can handle a continuous collector current of up to 10A, making it capable of driving moderate to high power loads.
  • Low On-State Voltage: The device features a low saturation voltage (Vce(sat)) of typically 1.8V at 10A, which helps to minimize conduction losses and improve efficiency.
  • Speed: With a maximum switching frequency in the MHz range, it is well-suited for high-speed switching applications.
  • Co-Packaged Diode: The IGBT comes with a co-packaged fast recovery diode, which provides protection against reverse voltage transients and reduces component count in circuits.

Applications

The STGB10NC60KT4 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Inductive Heating
  • Welding Equipment

Reliability and Performance

STMicroelectronics ensures that the STGB10NC60KT4 meets the highest standards of reliability and performance. It features a robust design that is optimized for minimal thermal resistance and maximum electrical efficiency. The IGBT is also equipped with an advanced trench gate field-stop structure that provides enhanced switching performance and reduced energy losses during operation.

Environmental Compliance

The STGB10NC60KT4 is compliant with RoHS and other environmental regulations, reflecting STMicroelectronics' commitment to environmental sustainability. Its eco-friendly design ensures that it can be used in applications that require adherence to strict environmental standards.

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