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STF28N65M2

Part No STF28N65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely low gate charge | MOSFET N-CH 650V 20A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 20A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 35nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1440pF at 100V
Power Dissipation (Maximum) 30W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260962-STF28N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF28N65M2 CAD Model

Description

STF28N65M2 - STMicroelectronics N-channel MOSFET

The STF28N65M2 is a high-performance N-channel power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This MOSFET is part of ST's MDmesh™ M2 series, which is well-known for its excellent energy efficiency and high power density. The device is specifically engineered to address the demanding requirements of a wide range of applications including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and industrial applications.

Key Features:

  • Advanced Technology: The STF28N65M2 utilizes ST's second generation of MDmesh™ technology, which combines a vertical structure with a strip layout to yield one of the industry's lowest on-resistance (RDS(on)) and gate charge (Qg).
  • High Voltage Capability: This MOSFET is capable of handling high voltages, with a drain-source voltage (VDS) of up to 650V, making it suitable for high voltage applications.
  • Low On-Resistance: With an RDS(on) as low as 0.190 Ω, the STF28N65M2 ensures minimal power loss and improved efficiency in power conversion systems.
  • Reduced Switching Losses: The low gate charge and low input capacitance lead to reduced switching losses, which is critical for high-frequency operation.
  • High Current Capability: The device can handle continuous drain current (ID) up to 21 A, allowing for robust performance in high-power applications.
  • Enhanced Thermal Performance: The STF28N65M2 comes in a TO-220FP package that offers excellent thermal performance, ensuring reliability even under high temperature operating conditions.

Applications:

  • Switch-mode power supplies (SMPS)
  • LED lighting applications
  • Welding equipment
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • High-performance power management systems

In summary, the STF28N65M2 MOSFET from STMicroelectronics is a powerful and reliable component that offers a combination of high voltage capability, low on-resistance, and efficient switching performance, making it an ideal choice for designers looking to optimize power efficiency and thermal management in their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.1064 $52.8088
40+ $2.5489 $101.9560
61+ $2.4692 $150.6212
84+ $2.3896 $200.7264
109+ $2.3099 $251.7791
145+ $2.0710 $300.2950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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