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STD5NE10L

Part No STD5NE10L
Manufacturer STMicroelectronics
Catalog Electronic Wholesale
Description N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET
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Manufacturer STMicroelectronics
Win Source Part Number 1260875-STD5NE10L
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD5NE10L CAD Model

Description

The STD5NE10L is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver the efficiency and speed required by a range of power management applications. This device is part of STMicroelectronics' STripFET™ series, which is renowned for its low on-resistance and low gate charge, making it an ideal choice for high-efficiency solutions.

Key Features

  • Low Threshold Drive: The STD5NE10L can be driven at lower gate voltages, making it compatible with logic-level devices and easier to use in low-voltage applications.
  • High Switching Speed: Fast switching characteristics of this MOSFET result in reduced switching losses and improved overall efficiency.
  • Low On-Resistance (R<sub>DS(on)): With a very low on-state resistance, this MOSFET minimizes conduction losses, which is critical for power-intensive applications.
  • High Current Capability: The device can handle continuous drain currents, allowing it to be used in applications with high current demands.
  • 100% Avalanche Tested: Guarantees robust performance and reliability even under extreme conditions.

Applications

The STD5NE10L is versatile and can be used in a wide range of applications, including:

  • Power supplies
  • DC-DC converters
  • Motor control circuits
  • Automotive applications
  • Switching applications

Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 100V Continuous Drain Current (I<sub>D) 5A Power Dissipation (P<sub>D) 45W R<sub>DS(on) 0.28Ω Operating Temperature Range -55°C to 175°C

The STD5NE10L from STMicroelectronics represents a balance of performance, efficiency, and reliability, suitable for designers looking to optimize their power management systems with a robust and versatile N-channel MOSFET.

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