STB6N80K5 - N-channel 800 V, 1.7 Ω typ., 4 A SuperMESH™ K5 Power MOSFET in a D2PAK package by STMicroelectronics

The STB6N80K5 is a high voltage N-channel Power MOSFET designed and manufactured by the renowned semiconductor company STMicroelectronics. This MOSFET is part of the SuperMESH™ K5 family, which is known for its excellent RDS(on) area ratio and reduced on-resistance. With an advanced technology that ensures high switching performance, the STB6N80K5 is an ideal choice for a variety of power applications.

Key Features:

• Voltage Rating: The STB6N80K5 operates at a drain-source voltage (V<sub>DS) of 800 V, making it suitable for high voltage applications.
• Low On-Resistance: With a typical on-resistance (RDS(on)) of just 1.7 Ω, this MOSFET ensures high efficiency and low conduction losses.
• Current Capability: It has a continuous drain current (I<sub>D) rating of 4 A, which makes it capable of handling moderate power levels.
• Package: Housed in a robust D2PAK package, the STB6N80K5 is designed for improved thermal performance and space-saving PCB design.
• 100% Avalanche Tested: Each device is rigorously tested to guarantee high reliability in applications subject to high energy pulses.
• Zener-Protected: The gate-source of this MOSFET is protected by an integrated Zener diode, which safeguards against electrostatic discharge (ESD) events.

Applications:

The STB6N80K5 is versatile and can be used in a wide range of electronic circuits, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting applications
• High Efficiency DC-DC Converters
• Power Factor Correction (PFC) circuits
• Motor Control applications

With its high voltage capability and energy-efficient operation, the STB6N80K5 from STMicroelectronics is a reliable choice for designers looking to optimize their power management systems. Its robust package and protection features ensure a long operational life and consistent performance.