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STB6N62K3

Part No STB6N62K3
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Very low intrinsic capacitance | MOSFET N-CH 620V 5.5A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 620V
Id - Continuous Drain Current 5.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 875pF at 50V
Power Dissipation (Maximum) 90W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1260683-STB6N62K3
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB6N62K3 CAD Model

Description

STB6N62K3 - N-channel 620 V, 1.2 Ω typ., 4 A SuperMESH™3 Power MOSFET in D²PAK Package

The STB6N62K3 is a cutting-edge N-channel Power MOSFET from STMicroelectronics, designed with the innovative SuperMESH™3 technology. This high-performance MOSFET is housed in a robust D²PAK package, offering a perfect balance of efficiency and reliability for a wide range of power applications.

Key Features

  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 620 V, this MOSFET is suitable for high-voltage applications, providing ample headroom for voltage spikes and surges commonly found in industrial environments.
  • Low On-Resistance: The STB6N62K3 boasts an on-resistance (R<sub>DS(on)) of just 1.2 Ω (typical), which means it has a lower conduction loss and thus improves overall efficiency in electronic circuits.
  • High Current Capability: With a continuous drain current (I<sub>D) of 4 A, this MOSFET can handle significant power, making it ideal for a range of demanding applications.
  • Reduced Gate Charge: The MOSFET's design ensures a low gate charge (Q<sub>g), which translates to reduced switching losses and faster switching speeds.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under stressful conditions.
  • Zener-Protected: The gate-source (GS) of this MOSFET is protected by a Zener diode, safeguarding it against overvoltage and enhancing its durability.

Applications

The STB6N62K3 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting applications
  • High-performance DC-DC converters
  • Power factor correction circuits
  • Motor control circuits

Quality and Reliability

STMicroelectronics is known for its commitment to quality, and the STB6N62K3 is no exception. It is manufactured to meet the highest standards of performance and reliability, ensuring that it meets the needs of even the most demanding applications. Whether you're designing power supplies, lighting systems, or motor controls, the STB6N62K3 is an excellent choice for enhancing efficiency and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1288 $62.0840
125+ $0.9262 $115.7750
195+ $0.8974 $174.9930
270+ $0.8683 $234.4410
345+ $0.8395 $289.6275
465+ $0.7526 $349.9590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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