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STB100N6F7

Part No STB100N6F7
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 60V 100A F7 D2PAK / High avalanche ruggedness
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5.6mOhm at 50A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1980pF at 25V
Power Dissipation (Maximum) 125W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number Series STB100N
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811885-STB100N6F7
Ultra Librarian 3D Model Ultra Librarian STB100N6F7 CAD Model

Description

STB100N6F7 - High Performance N-Channel MOSFET by STMicroelectronics

The STB100N6F7 is a cutting-edge N-Channel MOSFET brought to you by the renowned semiconductor manufacturer, STMicroelectronics. This power MOSFET is designed to deliver high performance and efficiency in a wide array of applications. With its robust structure and advanced technology, it is an excellent choice for designers looking to improve the power density and efficiency of their systems.

Key Features

  • Low On-Resistance: The STB100N6F7 boasts an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: This device can handle high continuous drain currents (ID), making it suitable for demanding power applications that require robust current handling.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and durability even under strenuous conditions.
  • Low Gate Charge: The MOSFET features a low gate charge (Qg), which minimizes switching losses and allows for faster switching speeds.
  • High Threshold Voltage: With a higher threshold voltage, the STB100N6F7 offers better control and stability in circuit operation, reducing the risk of unintentional turn-on.

Applications

The STB100N6F7 is versatile and can be used in a variety of applications, including:

  • Switching regulators
  • DC/DC converters
  • Motor drives
  • Power management solutions
  • Automotive applications
  • High-performance computing

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STB100N6F7 is no exception, featuring robust thermal performance and longevity. It is designed to operate effectively even in harsh environments, ensuring that it can meet the needs of critical systems without compromise.

Whether you're designing power supplies, working on automotive electronics, or developing high-efficiency computing platforms, the STB100N6F7 offers the performance and reliability that modern electronic systems require.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8174 $54.5220
70+ $1.4912 $104.3840
105+ $1.4446 $151.6830
145+ $1.3980 $202.7100
185+ $1.3514 $250.0090
250+ $1.2116 $302.9000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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