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NAND01GW3B2BN6

Part No NAND01GW3B2BN6
Manufacturer STMicroelectronics
Catalog Flash
Description NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tube / 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits(ICs)
Family Memory
Manufacturer STMicroelectronics
Win Source Part Number 332685-NAND01GW3B2BN6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name NAND01GW3B
Introduction Date June 09, 2006
ECCN 3A991.b.1.a
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NAND01GW3B2BN6 CAD Model

Description

Product Overview: NAND01GW3B2BN6 - STMicroelectronics

The NAND01GW3B2BN6 is a high-performance NAND Flash memory chip developed by STMicroelectronics, one of the industry's leading semiconductor manufacturers. This memory device is designed to offer a reliable storage solution for a wide range of applications, including embedded systems, mobile devices, solid-state drives (SSDs), and other digital platforms requiring high-density data storage.

With a storage capacity of 1 Gbit, the NAND01GW3B2BN6 provides ample space for firmware, boot code, and user data. It utilizes a small block size, which facilitates efficient management and organization of data, enabling faster access times and improved overall device performance. This particular NAND Flash memory operates on a supply voltage range of 2.7V to 3.6V, making it suitable for use in low-power applications.

The NAND01GW3B2BN6 features an asynchronous SLC (Single-Level Cell) design, which ensures high reliability and endurance for write/erase cycles. SLC technology is known for its ability to store one bit of data per cell, providing the highest level of performance and the longest lifespan among NAND Flash types.

This memory chip is available in a TSOP48 package, which is widely accepted in the industry for its ease of PCB (Printed Circuit Board) design and assembly. The package's dimensions and pin configuration are optimized to facilitate simple integration into a variety of electronic systems without the need for significant redesign.

STMicroelectronics equips the NAND01GW3B2BN6 with advanced features such as bad block management, wear leveling, and error correction code (ECC) to ensure data integrity and extend the life of the product. These features are crucial for applications where data reliability is paramount.

Overall, the NAND01GW3B2BN6 from STMicroelectronics represents a robust and efficient storage solution that combines high capacity, reliability, and compatibility with a range of voltages and applications. Its technical specifications and features make it an excellent choice for designers and engineers looking to incorporate high-quality NAND Flash memory into their next project.

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