The HYB5116400BJ-60 is a 16M-bit Dynamic RAM (DRAM) organized as 4,194,304 words x 4 bits. Formerly manufactured by Siemens, this DRAM offers a significant memory capacity with a reasonable access time. It is suitable for a range of memory applications requiring reliable performance.

Applications

• Main memory in older computer systems
• Graphics memory in display adapters
• Buffer memory in peripherals
• Memory for industrial control systems
• Storage in various electronic devices

Features

• Density: 16M-bit capacity
• Access time: 60ns
• Single 5V power supply
• TTL compatible inputs and outputs
• Refresh modes: Self-refresh, Hidden refresh
• Package: SOJ (Small Outline J-lead) package

Benefits

• High memory capacity for storing large amounts of data
• Reasonable access time for good system performance
• Easy to use with a single power supply
• Simple integration with existing systems due to TTL compatibility
• Efficient memory management with supported refresh modes
• Suitable for automated assembly due to the SOJ package

Technical Specifications

The HYB5116400BJ-60 operates on a single 5V ± 10% power supply. It features TTL compatible input and output signals, making integration with existing systems easier. Typical active power consumption is around 400mW, with a significantly lower standby power consumption. The refresh cycle time is usually around 64ms. The operating temperature range is generally between 0°C and +70°C. The SOJ (Small Outline J-lead) package is designed for surface mount assembly.

The HYB5116400BJ-60 is a reliable DRAM suitable for various applications requiring a balance of memory capacity and access speed. Its 4-bit organization is suitable for systems that handle data in nibbles. The SOJ package allows for efficient board layout, and the TTL compatibility simplifies system integration. The device provides a practical solution for adding memory to older systems or implementing memory-intensive tasks in embedded applications.