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SSD20P04-60D

Part No SSD20P04-60D
Manufacturer SECOS
Catalog Electronic Wholesale
Description P-Ch Enhancement Mode Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer SECOS
Win Source Part Number 1259187-SSD20P04-60D
Manufacturer Homepage www.secosgmbh.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSD20P04-60D CAD Model

Description

The SSD20P04-60D is a P-Channel enhancement mode MOSFET from SECOS. It is designed for high-efficiency power management applications, offering a low on-resistance and fast switching speed. This MOSFET is suitable for use in a variety of applications requiring efficient power control.

Applications:

  • Load Switching
  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control

Features:

  • P-Channel Enhancement Mode MOSFET
  • Low On-Resistance: Reduces power losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • -40V Drain-Source Voltage: Suitable for a range of applications.
  • -20A Continuous Drain Current: Capable of handling significant current loads.
  • Available in various surface mount packages (e.g., TO-252, TO-251): Allows for efficient thermal dissipation.
  • RoHS Compliant: Environmentally friendly and complies with industry standards.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation, leading to higher efficiency in power conversion applications.
  • Reduced Heat Generation: Lower on-resistance also contributes to reduced heat generation, improving overall system reliability.
  • Improved Switching Performance: The fast switching speed enhances the performance of high-frequency applications.
  • Simplified Circuit Design: Easy to integrate into existing and new designs.
  • Reliable Operation: Designed for robust and reliable performance in demanding applications.

Technical Specifications:

  • Drain-Source Voltage (Vds): -40V
  • Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): -20A
  • Pulsed Drain Current (Idm): -80A
  • On-Resistance (Rds(on)): Typically 20 mΩ at Vgs=-10V
  • Gate Threshold Voltage (Vgs(th)): -1V to -3V
  • Total Gate Charge (Qg): Varies depending on specific datasheet
  • Operating and Storage Temperature Range: -55°C to +175°C

The SSD20P04-60D P-Channel MOSFET provides efficient power management capabilities with its low on-resistance and fast switching speed. It is a suitable choice for various applications requiring reliable and efficient power control.

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