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Same model may have multiple batches, images only for reference.
VT6X11T2R Real Image
Same model may have multiple batches, images only for reference.

VT6X11T2R

Part No VT6X11T2R
Manufacturer Rohm Semiconductor
Catalog HOT - SALES and EOL Components
Description NPN+NPN GENERAL PURPOSE AMPLIFIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Maximum) 200mA
Voltage - Collector Emitter Breakdown (Maximum) 20V
Vce Saturation (Maximum) at Ib, Ic 300mV at 10mA, 100mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 120 at 1mA, 2V
Maximum Power 150mW
Frequency - Transition 400MHz
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package 6-SMD, Flat Leads
Supplier Device Package VMT6
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 400352-VT6X11T2R
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian VT6X11T2R CAD Model

Description

Rohm Semiconductor 400352-VT6X11T2R is a dual NPN transistor with a frequency transition of 400MHz.

  • Maximum Collector Current: 200mA
  • Maximum Collector-Emitter Breakdown Voltage: 20V
  • Vce Saturation: 300mV @ 10mA, 100mA
  • DC Current Gain: 120 @ 1mA, 2V
  • Package: VMT6
  • Packaging: reel
  • Supply and Demand Status: balanced
  • MSL Level: 1 (Unlimited)
  • Maximum Power Dissipation: 150mW

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