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Same model may have multiple batches, images only for reference.
UMZ8NTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

UMZ8NTR

Part No UMZ8NTR
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V/12V UMT6
Datasheet
UMZ8NTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity NPN, PNP
Maximum Current Collector 150mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 12V
Max Vce (sat) 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 1mA, 6V / 270 @ 10mA, 2V
Maximum Power Dissipation 150mW
Frequency - Transition 180MHz, 260MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 1116412-UMZ8NTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UMZ8NTR CAD Model

Description

The Rohm Semiconductor 428957 is a discrete semiconductor product with NPN and PNP transistor polarity.

  • Maximum Collector-Emitter Breakdown Voltage: 50V and 12V
  • Maximum Current Collector: 150mA and 500mA
  • Typical Gain (hFE): 120 @ 1mA, 6V / 270 @ 10mA, 2V
  • Maximum Power Dissipation: 150mW
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Case/Package: UMT6
  • Frequency-Transition: 180MHz and 260MHz
  • Not for New Designs
  • Operating Temperature Range: 150°C (TJ)
  • Mounting: Reel-TR

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