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Same model may have multiple batches, images only for reference.
XN0160100L Real Image
Same model may have multiple batches, images only for reference.

XN0160100L

Part No XN0160100L
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.1A MINI5
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN, PNP (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100μA
Typical Gain (hFE) (Min) 160 @ 2mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 150MHz, 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package Mini5-G1
Win Source Part Number 1119444-XN0160100L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian XN0160100L CAD Model

Description

The Panasonic Electronic Components 1119444-XN0160100L transistor is an NPN and PNP (Emitter Coupled) type with a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Typical Gain (hFE) (Min) @ 2mA, 10V: 160
  • Vce (sat) @ 10mA, 100mA / 10mA, 100mA: 300mV / 500mV
  • Collector Cut-Off Current (Max): 100μA
  • Frequency Transition: 150MHz, 80MHz
  • Application: Discrete Semiconductor Products
  • Mounting: SMD (SMT)
  • Packaging: Mini5-G1
  • Status: Obsolete (EOL)

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