The UMR12N is a small signal Schottky barrier diode manufactured by Rohm Semiconductor. It is designed for high-speed switching applications and features low forward voltage drop and fast reverse recovery time. The device is housed in an ultra-small mold (UMD2) package, making it ideal for space-constrained applications.

Applications:

• High-speed switching circuits
• Voltage clamping
• Protection circuits
• DC-DC converters
• Mobile devices

Features:

• Low forward voltage (VF)
• Fast reverse recovery time (trr)
• Ultra-small mold (UMD2) package
• High reliability
• RoHS compliant

Benefits:

• Improved circuit efficiency due to low VF
• Reduced switching losses because of fast trr
• Space-saving design due to the UMD2 package
• Enhanced system reliability
• Environmentally friendly

Additional Details:

The UMR12N has a maximum repetitive peak reverse voltage of 30V and a maximum average rectified forward current of 30mA. Its operating temperature range is -40°C to +85°C. The forward voltage is typically 0.37V at a forward current of 1mA. The reverse recovery time is typically 5ns. The UMD2 package dimensions are approximately 0.6mm x 0.3mm x 0.3mm. This diode's small size and excellent switching characteristics make it a versatile component for various electronic circuits requiring fast and efficient performance.