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RFN10NS3S

Part No RFN10NS3S
Manufacturer Rohm Semiconductor
Catalog Diodes, Rectifiers - Single
Description Super Fast Recovery Diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family Diodes,Rectifiers - Single
Win Source Part Number 182865-RFN10NS3S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RFN10NS3S CAD Model

Description

The RFN10NS3S is a Schottky barrier diode manufactured by Rohm Semiconductor. These diodes are known for their fast switching speed and low forward voltage drop, making them suitable for various high-frequency and power rectification applications. Rohm Semiconductor is a reputable manufacturer of semiconductors, recognized for producing reliable and efficient components.

Applications

  • High-Frequency Rectification: Used in circuits requiring fast switching speeds, such as RF detectors.
  • Voltage Clamping: Protects sensitive circuits from voltage spikes.
  • Reverse Polarity Protection: Prevents damage from incorrectly connected power supplies.
  • Mixing: Employed in mixer circuits for frequency conversion in communication systems.
  • Sampling Circuits: Utilized in sample-and-hold circuits due to their fast response time.

Features

  • Low Forward Voltage Drop: Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Enables operation at high frequencies.
  • Low Capacitance: Reduces signal distortion and improves high-frequency performance.
  • Small Size: Allows for compact circuit designs.
  • High Reliability: Ensures consistent performance over a wide range of operating conditions.

Benefits

  • Increased Efficiency: Reduces power consumption in rectification and switching applications.
  • Improved High-Frequency Performance: Enables faster and more accurate signal processing.
  • Enhanced Circuit Protection: Safeguards sensitive components from damage.
  • Reduced Noise: Minimizes unwanted signal interference.
  • Simplified Circuit Design: Easier integration into various electronic systems.

Additional Details

Schottky barrier diodes, like the RFN10NS3S, are typically made from a metal-semiconductor junction. This construction results in a lower forward voltage drop compared to traditional silicon diodes. The device's performance is characterized by parameters such as forward voltage, reverse leakage current, and junction capacitance. The specific voltage and current ratings should be considered when selecting this diode for a particular application. Consult the Rohm Semiconductor datasheet for precise specifications and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.1804 $64.7216
9+ $13.2767 $119.4903
14+ $12.8621 $180.0694
19+ $12.4463 $236.4797
24+ $12.0316 $288.7584
33+ $10.7877 $355.9941
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,300 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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