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Same model may have multiple batches, images only for reference.
R6015ENXC7G
Same model may have multiple batches, images only for reference.

R6015ENXC7G

Part No R6015ENXC7G
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V 15A TO-220FM, LOW-NOISE POW / N-Channel 600 V 15A (Ta) 60W (Tc) Through Hole TO-220FM
Datasheet
R6015ENXC7G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6015ENXC7G
Standard Package 50
Win Source Part Number 1028500-R6015ENXC7G
Ultra Librarian 3D Model Ultra Librarian R6015ENXC7G CAD Model

Description

The 1028500-R6015ENXC7G is a N-Channel MOSFET transistor from Rohm Semiconductor.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 15A
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Package: TO-220-3 Full Pack
  • Mounting: Through-Hole
  • Gate Charge: 40 nC @ 10 V
  • Input Capacitance: 910 pF @ 25 Vds

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