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Same model may have multiple batches, images only for reference.
UPA2450BTL-E1-A Real Image
Same model may have multiple batches, images only for reference.

UPA2450BTL-E1-A

Part No UPA2450BTL-E1-A
Manufacturer Renesas Electronics America
Catalog FETs - Arrays
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.6A
Rds On (Max) @ Id, Vgs 17.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case 6-VFDFN Exposed Pad
Supplier Device Package 6-HWSON
Base Product Number UPA2450
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 389344-UPA2450BTL-E1-A
Ultra Librarian 3D Model Ultra Librarian UPA2450BTL-E1-A CAD Model

Description

The 389344-UPA2450BTL-E1-A is a dual N-channel MOSFET array from Renesas Electronics America. It is designed for logic level gate drive and has a drain to source voltage rating of 20V.

  • Continuous drain current: 8.6A
  • Maximum on-resistance: 17.5mOhm @ 4A and 4.5V gate-source voltage
  • Gate threshold voltage: 1.5V @ 1mA
  • Maximum power dissipation: 700mW
  • Mounting: surface mountable
  • Package: 6-VFDFN exposed pad
  • Gate charge: 8nC @ 4V
  • Input capacitance: 520pF @ 10V
  • Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3396 $59.4300
415+ $0.2795 $115.9925
645+ $0.2703 $174.3435
885+ $0.2622 $232.0470
1,145+ $0.2529 $289.5705
1,535+ $0.2264 $347.5240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 198,700 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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