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UPA1914TE-T1-AT

Part No UPA1914TE-T1-AT
Manufacturer Renesas Electronics America
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Categories Uncategorized
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 841535-UPA1914TE-T1-AT
Ultra Librarian 3D Model Ultra Librarian UPA1914TE-T1-AT CAD Model

Description

The UPA1914TE-T1-AT is a P-channel power MOSFET manufactured by Renesas Electronics America. This MOSFET is designed for a broad range of power management applications, featuring low on-resistance and high-speed switching. Its characteristics make it particularly well-suited for use in portable devices, DC-DC converters, and load switching scenarios where efficiency and compact size are essential.

Applications:

  • DC-DC Converters: Implementing voltage regulation and power conversion in various electronic devices.
  • Load Switching: Effectively controlling power to different circuits in electronic systems.
  • Power Management in Portable Devices: Used in smartphones, tablets, and other battery-operated devices.
  • Battery Protection Circuits: Protecting batteries from overcharge, over-discharge, and short circuits.

Features:

  • P-Channel MOSFET: Suitable for high-side switching configurations.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • High-Speed Switching: Enables fast and efficient switching performance.
  • Surface Mount Package (T1-AT): Compact design for space-constrained applications.
  • Logic Level Gate Drive: Simplifies interfacing with microcontroller and driver circuits.

Benefits:

  • Enhanced Efficiency: Low RDS(on) minimizes power dissipation, extending battery life.
  • Compact Design: Small form factor allows for integration in portable devices.
  • Simplified Circuit Design: Logic-level gate drive eases interface with control circuits.
  • Reliable Performance: Designed for stable and consistent operation under various conditions.

The UPA1914TE-T1-AT's key technical specifications generally include parameters such as drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)) at specific gate-source voltages. The low gate charge of this MOSFET contributes to its high-speed switching capabilities, which is crucial for efficient power conversion. This device is optimized for applications demanding a balance between efficiency, size, and reliable performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6260 $59.4700
225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 97,100 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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