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UPA1872BGR-9JG-E1-A

Part No UPA1872BGR-9JG-E1-A
Manufacturer Renesas Electronics America
Catalog FETs - Arrays
Description POWER, 10A, 20V, N-CH MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 945pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Product Number UPA1872
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 902059-UPA1872BGR-9JG-E1-A
Ultra Librarian 3D Model Ultra Librarian UPA1872BGR-9JG-E1-A CAD Model

Description

The UPA1872BGR-9JG-E1-A is a dual N-channel MOSFET array designed for use in discrete semiconductor products.

  • Type: Dual N-channel MOSFET array
  • Manufacturer: Renesas Electronics America
  • Package: Bulk
  • Standard Package: 3,000 pieces
  • Gate Type: Logic level
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id) @ 25°C: 10A
  • On-Resistance (Rds On): 13mOhm @ 5A and 4.5V

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