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RJK03M5DNS-00#J5

Part No RJK03M5DNS-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A 8HWSON / N-Channel 30 V 25A (Ta) 15W (Tc) Surface Mount 8-HWSON (3.3x3.3)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 12.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 10 V
Power Dissipation (Max) 15W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-HWSON (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number RJK03M5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names RJK03M5DNS-00#J5-ND,RJK03M5DNS-00#J5CT,RJK03M5DNS-00#J5TR,RJK03M5DNS-00#J5DKR,-1161-RJK03M5DNS-00#J5CT
Standard Package 5,000
Win Source Part Number 1001351-RJK03M5DNS-00#J5
Ultra Librarian 3D Model Ultra Librarian RJK03M5DNS-00#J5 CAD Model

Description

The Renesas Electronics America RJK03M5DNS-00#J5 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current: 25A (Ta)
  • Maximum Power Dissipation: 15W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-HWSON (3.3x3.3)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9545 $52.4975
130+ $0.7832 $101.8160
200+ $0.7588 $151.7600
275+ $0.7343 $201.9325
355+ $0.7098 $251.9790
475+ $0.6364 $302.2900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,142 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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