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Same model may have multiple batches, images only for reference.
RJH65T47DPQ-A0#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH65T47DPQ-A0#T0

Part No RJH65T47DPQ-A0#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT TRENCH 650V 90A TO247A / IGBT Trench 650 V 90 A 375 W Through Hole TO-247A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 90 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Power - Max 375 W
Switching Energy 520µJ (on), 560µJ (off)
Input Type Standard
Gate Charge 127 nC
Td (on/off) @ 25°C 45ns/190ns
Test Condition 400V, 45A, 10Ohm, 15V
Reverse Recovery Time (trr) 100 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247A
Base Product Number RJH65T47
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 1011358-RJH65T47DPQ-A0#T0
Ultra Librarian 3D Model Ultra Librarian RJH65T47DPQ-A0#T0 CAD Model

Description

The Renesas Electronics America RJH65T47DPQ-A0#T0 is a discrete semiconductor product that is suitable for use in various applications.

  • Power-Max: 375 W
  • Reverse Recovery Time: 100 ns
  • Type: Trench IGBT
  • Voltage - Collector Emitter Breakdown: 650 V
  • Current - Collector (Ic) (Max): 90 A

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