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2SK1501

Part No 2SK1501
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220AB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 159016-2SK1501
Popularity Low
Supply and Demand Status Limited
Family Name 2SK1501
Introduction Date March 03, 1998
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK1501 CAD Model

Description

Overview of the 2SK1501

The 2SK1501 is a high-performance N-channel MOSFET transistor that is highly regarded in the semiconductor industry for its efficiency and reliability. This device is typically used in various high-speed switching applications due to its low on-resistance and fast switching speed. Its compact package makes it ideal for space-constrained designs, while offering robust electrical performance.

Features and Benefits

  • High Efficiency: The 2SK1501 is designed to deliver high efficiency with a low on-resistance of just a few milliohms, minimizing power loss in high-speed switching applications.
  • Fast Switching Speed: With a rapid transition between on and off states, this component helps in achieving high-frequency performance in circuits.
  • Durable and Reliable: Built to withstand significant stress, the 2SK1501 provides stability and reliability in demanding applications.
  • Compact Size: Its small footprint facilitates easy integration into compact PCBs and modules.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Applications
  • Power Management Systems
  • Audio Amplifiers

Additional Details

The 2SK1501 is an exemplary choice for engineers looking to design high-efficiency systems. Its package ensures excellent thermal performance, maintaining optimal operation even under extended use. The device's design caters to applications where space-saving is crucial without compromising on the performance metrics crucial to power management and switching applications.

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