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PJS6403_S1_00001

Part No PJS6403_S1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 30V P-CHANNEL ENHANCEMENT MODE M / P-Channel 30 V 6.4A (Ta) 2W (Ta) Surface Mount SOT-23-6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 15 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJS6403_S1_00001TR,3757-PJS6403_S1_00001CT,3757-PJS6403_S1_00001DKR
Standard Package 3,000
Win Source Part Number 1085309-PJS6403_S1_00001
Ultra Librarian 3D Model Ultra Librarian PJS6403_S1_00001 CAD Model

Description

The Panjit PJS6403_S1_00001 is a P-channel MOSFET transistor with a drain-to-source voltage of 30 V and continuous drain current of 6.4 A @ 25°C.

  • Drain-to-Source Voltage: 30 V
  • Continuous Drain Current: 6.4 A @ 25°C
  • Maximum Rds on: 32mOhm @ 4A and 10V
  • Gate Charge: 7.8 nC @ 4.5 V
  • Input Capacitance: 870 pF @ 15 Vds
  • Package: SOT-23-6
  • Packaging: Tape and Reel
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • Drive Voltage: 4.5V and 10V

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