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SMMUN2111LT3G

Part No SMMUN2111LT3G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 50V SOT23-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMUN2111
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names ONSONSSMMUN2111LT3G,2156-SMMUN2111LT3G-OS
Standard Package 10,000
Win Source Part Number 1120953-SMMUN2111LT3G
Ultra Librarian 3D Model Ultra Librarian SMMUN2111LT3G CAD Model

Description

The SMMUN2111LT3G is an innovative bipolar junction transistor (BJT) developed by ON Semiconductor, a leading provider in the field of energy-efficient electronics. This product is designed to meet the requirements of modern electronic circuits, offering a blend of high performance and reliability.

Key Features

  • Transistor Type: The SMMUN2111LT3G is a PNP transistor, which is widely used for amplification and switching purposes.
  • Voltage Ratings: It supports a collector-base voltage (VCBO) of -50V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V, making it suitable for various applications.
  • Current Capacity: This transistor can handle a continuous collector current (IC) of up to -1A, providing sufficient drive capability for a range of uses.
  • Power Dissipation: The device has a power dissipation (PD) of 225mW, ensuring it can maintain stable operation under typical conditions without overheating.
  • Package: It comes in a compact SOT-23 surface-mount package, which is ideal for space-constrained applications.
  • RoHS Compliant: The SMMUN2111LT3G is RoHS compliant, meeting the environmental standards that restrict the use of hazardous substances in electronic equipment.

Applications

The versatile nature of the SMMUN2111LT3G makes it a great choice for a wide array of applications. It's particularly useful in:

  • Power management circuits
  • Signal amplification
  • Switching applications
  • Linear amplification
  • Motor control circuits

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The SMMUN2111LT3G is manufactured with the highest standards, ensuring that it meets the rigorous demands of industrial and commercial use. The product's reliability is further underscored by ON Semiconductor's reputation for producing durable and dependable components.

Conclusion

The SMMUN2111LT3G from ON Semiconductor is a testament to the company's dedication to innovation and quality. With its robust voltage and current ratings, along with a compact package design, this PNP transistor is an excellent choice for designers who require a reliable component that occupies minimal PCB space. Whether for amplification or switching, the SMMUN2111LT3G is engineered to deliver consistent performance for a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,575+ $0.0162 $57.9150
8,335+ $0.0139 $115.8565
13,640+ $0.0127 $173.2280
18,185+ $0.0127 $230.9495
22,730+ $0.0127 $288.6710
33,335+ $0.0104 $346.6840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 95,900 pieces
MOQ: 3575 pcs
Order Increment : 1 pcs
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