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NVJD5121NT1G

Part No NVJD5121NT1G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 60V 0.295A SC88 / Mosfet Array 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 295mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Power - Max 250mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NVJD5121
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 851837-NVJD5121NT1G
Ultra Librarian 3D Model Ultra Librarian NVJD5121NT1G CAD Model

Description

ON Semiconductor NVJD5121NT1G - N-Channel Power MOSFET

The ON Semiconductor NVJD5121NT1G is a high-performance N-Channel Power MOSFET designed for diverse applications, emphasizing energy efficiency and reliability. This power MOSFET is a crucial component for designers looking to optimize their power management solutions in various electronic devices.

Key Features:

  • Low RDS(on): The device offers a low on-resistance, which minimizes conduction losses and improves overall efficiency. This feature is particularly beneficial in applications where power conservation is critical.
  • High Current Capacity: With the ability to handle a continuous drain current, this MOSFET can support high-power applications without compromising performance.
  • High Voltage Tolerance: The NVJD5121NT1G is designed to withstand substantial voltage, making it suitable for a wide range of industrial and consumer applications.
  • Fast Switching Speed: The device's rapid switching capability ensures efficient operation, which is essential for reducing switching losses in power conversion systems.
  • Thermal Stability: Excellent thermal characteristics allow the MOSFET to operate reliably over a broad temperature range, ensuring consistent performance even under thermal stress.

Applications:

The versatility of the NVJD5121NT1G makes it an ideal choice for a variety of applications, including:

  • Power Supplies
  • DC-DC Converters
  • Motor Drives
  • Automotive Systems
  • LED Lighting
  • Switch Mode Power Supplies (SMPS)

Package and Environmental Compliance:

The NVJD5121NT1G comes in a compact and robust surface-mount package that is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability. The device's packaging is designed for optimal thermal performance and space-saving on PCBs.

In conclusion, the ON Semiconductor NVJD5121NT1G N-Channel Power MOSFET is a high-efficiency, robust solution for modern electronic designs requiring reliable and energy-efficient power management. Its combination of low on-resistance, high current handling, and fast switching speeds make it a versatile component for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1750 $50.7500
700+ $0.1436 $100.5200
1,080+ $0.1391 $150.2280
1,490+ $0.1346 $200.5540
1,925+ $0.1301 $250.4425
2,575+ $0.1167 $300.5025
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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