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NTJD3158CT1G

Part No NTJD3158CT1G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V SOT-363 / Mosfet Array 20V 630mA, 820mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 630mA, 820mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD31
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649827-NTJD3158CT1G
Ultra Librarian 3D Model Ultra Librarian NTJD3158CT1G CAD Model

Description

ON Semiconductor NTJD3158CT1G Dual P-Channel Power MOSFET

The NTJD3158CT1G is a high-performance dual P-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This compact and efficient MOSFET is an ideal choice for a wide range of applications, offering power management solutions that emphasize energy savings and reliability.

Constructed with advanced trench technology, the NTJD3158CT1G provides an excellent RDS(on) performance which results in lower conduction losses. This feature is particularly beneficial in applications where high efficiency is paramount. The device is housed in a small 6-Pin TSOP package (Case 318G), which is designed to save space on the PCB while still delivering robust power handling capabilities.

The NTJD3158CT1G boasts a dual P-Channel configuration, which allows for a more compact design in applications requiring two P-Channel MOSFETs. This can simplify the circuit design by reducing the number of components and potentially lowering the overall system cost. With a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -3 A, this MOSFET can handle significant power for its size.

ON Semiconductor has designed the NTJD3158CT1G with a gate-source threshold voltage (VGS(th)) that ensures a low gate drive requirement, making it compatible with a wide range of drive circuits and controllers. This feature simplifies the integration of the MOSFET into various designs, including portable and battery-powered devices, where power conservation is crucial.

Key applications for the NTJD3158CT1G include power management in portable electronics, battery management systems, load switch applications, and other situations where a high-efficiency, low-profile P-Channel MOSFET is needed. Its reliability and performance make it a suitable choice for designers looking to optimize their power management strategies in compact electronic devices.

Overall, the NTJD3158CT1G from ON Semiconductor is a testament to the company's commitment to providing innovative, energy-saving components that do not compromise on performance or reliability, making it an excellent choice for modern electronic applications.

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