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NTH4L045N065SC1

Part No NTH4L045N065SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, NCHANNEL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202002-NTH4L045N065SC1
Manufacturer onsemi
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian NTH4L045N065SC1 CAD Model

Description

The ON Semiconductor NTH4L045N065SC1 is a cutting-edge silicon carbide (SiC) N-channel MOSFET designed for high-efficiency power applications. This device leverages the superior material properties of SiC to provide high performance in a wide range of demanding applications, including electric vehicle (EV) chargers, solar inverters, and industrial power supplies.

Key Features

  • High Blocking Voltage: With a drain-to-source breakdown voltage (VDS) of 650V, this MOSFET can handle high voltage applications with ease, making it ideal for modern power conversion systems.
  • Low On-Resistance: Featuring a low on-resistance (RDS(on)) of just 45 mΩ, the NTH4L045N065SC1 minimizes conduction losses, which enhances overall system efficiency.
  • Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Qrr) ensures swift switching performance, enabling higher frequency operation that can lead to smaller and more efficient power supply designs.
  • High-Temperature Operation: Capable of operating at junction temperatures (Tj) up to 175°C, this MOSFET is designed to maintain performance under thermal stress, providing reliability in harsh environments.

Applications

The NTH4L045N065SC1 is versatile and can be used in various high-performance applications where efficiency and thermal management are crucial. Some of these applications include:

  • Electric Vehicle (EV) Charging Stations
  • Renewable Energy Systems such as Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) Circuits

Advantages

The use of SiC technology in the NTH4L045N065SC1 provides several advantages over traditional silicon devices. These include higher efficiency due to lower switching and conduction losses, reduced cooling requirements due to better thermal performance, and the potential for smaller system size due to higher frequency operation. This MOSFET is a testament to ON Semiconductor's commitment to providing state-of-the-art power solutions that meet the evolving needs of modern electronics.

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