EN
  • EN
  • DE

NTH4L025N065SC1

Part No NTH4L025N065SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SILICON CARBIDE (SIC) MOSFET - 1
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Win Source Part Number WS1202003-NTH4L025N065SC1
Manufacturer onsemi
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 28.5mOhm @ 45A, 18V
Ultra Librarian 3D Model Ultra Librarian NTH4L025N065SC1 CAD Model

Description

ON Semiconductor NTH4L025N065SC1: A Cutting-Edge SiC MOSFET

The NTH4L025N065SC1 is a high-performance Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed by ON Semiconductor, a leader in energy-efficient innovations. This advanced power solution is engineered to meet the demanding requirements of modern electronic systems, offering superior efficiency, faster switching speeds, and higher temperature operation compared to traditional silicon devices.

Key Features

  • Low On-Resistance: With an RDS(on) of just 25 mΩ, this MOSFET ensures minimal conduction losses, improving overall system efficiency.
  • High Breakdown Voltage: Rated at 650V, the NTH4L025N065SC1 can handle high voltage applications with ease, providing reliable performance in demanding conditions.
  • High-Speed Switching: The device's fast switching capabilities reduce energy losses during power conversion, which is crucial for applications such as electric vehicle chargers, solar inverters, and power supplies.
  • Enhanced Thermal Performance: The SiC material provides excellent thermal conductivity, allowing the MOSFET to operate at higher temperatures without compromising reliability or longevity.

Applications

The NTH4L025N065SC1 is versatile and can be used in a wide array of applications, including:

  • Renewable energy systems
  • Electric vehicle (EV) charging stations
  • Power supply units
  • Motor drives
  • High-efficiency converters

Product Advantages

By integrating the NTH4L025N065SC1 into your power systems, you benefit from the exceptional robustness and longevity offered by SiC technology. This MOSFET's ability to operate at high frequencies enables compact and lightweight designs, while its reduced switching losses lead to lower cooling requirements and smaller heat sinks. This translates to cost savings in both the operation and physical design of your electronic systems.

ON Semiconductor's commitment to quality ensures that the NTH4L025N065SC1 MOSFET is a reliable and efficient choice for your high-power applications. Its advanced features and performance make it an essential component for designers looking to enhance system efficiency and durability.

You May Also Be Interested in

EPC
GANFET N-CH 100V 6A DIE OUTLINE
Lowest to $2.1546
Littelfuse Inc.
MOSFET N-CH 250V 80A TO3P
Lowest to $27.2727
Rohm Semiconductor
MOSFET P-CH 100V 1.5A TSMT6
Lowest to $0.5454
Littelfuse Inc.
MOSFET N-CH 500V 12A TO263
Need more? Email Us
Nexperia USA Inc.
MOSFET N-CH 20V 7A TO236AB
Lowest to $1.4553
Diodes Incorporated
MOSFET P-CH 40V 2.4A SOT23
Lowest to $0.0620
Littelfuse Inc.
MOSFET P-CH -100V -210A TO-264
Lowest to $33.4684
Rohm Semiconductor
MOSFET N-CH 45V 3A TSMT3
Lowest to $0.1363
Infineon Technologies
MOSFET N-CH 30V 19A DIRECTFET
Need more? Email Us

Top Sellers

FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $6.6527
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.0951
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $4.7519
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.3800
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $9.9790
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $5.9399
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $6.6527
Texas Instruments
IC BRIDGE DRIVER PAR 36HSSOP
Lowest to $19.3374
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.8016
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0713

Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.4939 $61.4817
6+ $16.8155 $100.8930
10+ $16.2900 $162.9000
13+ $15.7646 $204.9398
17+ $15.2391 $259.0647
22+ $13.6626 $300.5772
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Estimate Shipping
Enter your destination to get a shipping estimate
*
Availability: 7,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
Expected Shipping Date
Ship today if order in (HKT)
Supplier Lead-Time Call for availability
Estimate shipping fee
Enter your destination to get a shipping estimate
Estimate Shipping Fee

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess